HCH20NT60V Specs and Replacement

Type Designator: HCH20NT60V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-3P

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HCH20NT60V datasheet

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HCH20NT60V

Apr 2014 BVDSS = 600 V RDS(on) typ = 0.17 HCH20NT60V ID = 20 A 600V N-Channel Super Junction MOSFET TO-3P FEATURES Originative New Design 1 Superior Avalanche Rugged Technology 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 54 nC (Typ.) Extended Safe Opera... See More ⇒

Detailed specifications: HAT2114RJ, HAT2126RP, HAT2153R, HAT2265H, HAT3008RJ, HAT3018RJ, HCD6NC70S, HCD7N70S, IRF530, HCP12NK65V, HCP20NT60V, HCS12NK65V, HCS20NT60V, HCT7000M, HCT7000MTXV, HCU6N70S, HCU7NE70S

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