All MOSFET. HCP12NK65V Datasheet

 

HCP12NK65V Datasheet and Replacement


   Type Designator: HCP12NK65V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220
 

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HCP12NK65V Datasheet (PDF)

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HCP12NK65V

Apr 2014BVDSS = 650 VRDS(on) typ = 0.34 HCP12NK65V ID = 12 A650V N-Channel Super Junction MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Opera

Datasheet: HAT2126RP , HAT2153R , HAT2265H , HAT3008RJ , HAT3018RJ , HCD6NC70S , HCD7N70S , HCH20NT60V , IRLB4132 , HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV , HCU6N70S , HCU7NE70S , HFA9N90 .

History: NCE60P82AK | NVMFD5C668NL | APT5014BFLLG | BUK9K18-40E | YJG90G10A | STN3414 | CS6N70F

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