All MOSFET. HCP20NT60V Datasheet

 

HCP20NT60V Datasheet and Replacement


   Type Designator: HCP20NT60V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220
 

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HCP20NT60V Datasheet (PDF)

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HCP20NT60V

Apr 2014BVDSS = 600 VRDS(on) typ = 0.17 HCP20NT60V ID = 20 A600V N-Channel Super Junction MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Opera

Datasheet: HAT2153R , HAT2265H , HAT3008RJ , HAT3018RJ , HCD6NC70S , HCD7N70S , HCH20NT60V , HCP12NK65V , IRFP450 , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV , HCU6N70S , HCU7NE70S , HFA9N90 , HFB1N60S .

History: IPA50R140CP | SM9990DSQG | IPP80P03P4L-07 | TSM3424CX6 | IRF5Y3315CM | NP50P04KDG | AON7404G

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