HCS12NK65V Specs and Replacement

Type Designator: HCS12NK65V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-220F

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HCS12NK65V datasheet

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HCS12NK65V

Apr 2014 BVDSS = 650 V RDS(on) typ = 0.34 HCS12NK65V ID = 12 A 650V N-Channel Super Junction MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 32 nC (Typ.) Extended Safe Ope... See More ⇒

Detailed specifications: HAT2265H, HAT3008RJ, HAT3018RJ, HCD6NC70S, HCD7N70S, HCH20NT60V, HCP12NK65V, HCP20NT60V, AON7506, HCS20NT60V, HCT7000M, HCT7000MTXV, HCU6N70S, HCU7NE70S, HFA9N90, HFB1N60S, HFB1N65S

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