All MOSFET. HCS12NK65V Datasheet

 

HCS12NK65V MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCS12NK65V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220F

 HCS12NK65V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCS12NK65V Datasheet (PDF)

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 hcs12nk65v.pdf

HCS12NK65V HCS12NK65V

Apr 2014BVDSS = 650 VRDS(on) typ = 0.34 HCS12NK65V ID = 12 A650V N-Channel Super Junction MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Ope

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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