HCU6N70S Specs and Replacement

Type Designator: HCU6N70S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: I-PAK

HCU6N70S substitution

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HCU6N70S datasheet

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HCU6N70S

Dec 2013 BVDSS = 700 V RDS(on) typ = 1.05 HCU6N70S ID = 5.0 A 700V N-Channel Super Junction MOSFET I-PAK FEATURES Originative New Design 1 Superior Avalanche Rugged Technology 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 7 nC (Typ.) Extended Safe Operati... See More ⇒

Detailed specifications: HCD7N70S, HCH20NT60V, HCP12NK65V, HCP20NT60V, HCS12NK65V, HCS20NT60V, HCT7000M, HCT7000MTXV, AO4407, HCU7NE70S, HFA9N90, HFB1N60S, HFB1N65S, HFB1N70S, HFD1N60S, HFD1N65S, HFD2N60

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