All MOSFET. HCU6N70S Datasheet

 

HCU6N70S Datasheet and Replacement


   Type Designator: HCU6N70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: I-PAK
 

 HCU6N70S substitution

   - MOSFET ⓘ Cross-Reference Search

 

HCU6N70S Datasheet (PDF)

 ..1. Size:193K  semihow
 hcu6n70s.pdf pdf_icon

HCU6N70S

Dec 2013BVDSS = 700 VRDS(on) typ = 1.05 HCU6N70S ID = 5.0 A700V N-Channel Super Junction MOSFETI-PAKFEATURES Originative New Design1 Superior Avalanche Rugged Technology23 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operati

Datasheet: HCD7N70S , HCH20NT60V , HCP12NK65V , HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV , AO4407 , HCU7NE70S , HFA9N90 , HFB1N60S , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 .

History: MCU04N65 | CPH5852 | IPW50R250CP | IPI100N04S4-H2 | AFP1433 | GSM8822S | SWP068R08E8T

Keywords - HCU6N70S MOSFET datasheet

 HCU6N70S cross reference
 HCU6N70S equivalent finder
 HCU6N70S lookup
 HCU6N70S substitution
 HCU6N70S replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.