All MOSFET. HCU7NE70S Datasheet

 

HCU7NE70S Datasheet and Replacement


   Type Designator: HCU7NE70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: I-PAK
 

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HCU7NE70S Datasheet (PDF)

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HCU7NE70S

Dec 2013BVDSS = 700 VRDS(on) typ = 0.95 HCU7NE70S ID = 6.0 A700V N-Channel Super Junction MOSFETI-PAKFEATURES Originative New Design1 Superior Avalanche Rugged Technology23 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operat

Datasheet: HCH20NT60V , HCP12NK65V , HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV , HCU6N70S , 18N50 , HFA9N90 , HFB1N60S , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S .

History: TJ150F06M3L | 2SK2851 | STP3481 | STL35N15F3 | STP315N10F7 | TPB60R240M | IRF6100PBF

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