All MOSFET. HFA9N90 Datasheet

 

HFA9N90 Datasheet and Replacement


   Type Designator: HFA9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-247
 

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HFA9N90 Datasheet (PDF)

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HFA9N90

July 2013BVDSS = 900 VRDS(on) typ HFA9N90ID = 9.0 A900V N-Channel MOSFETTO-247FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Low

Datasheet: HCP12NK65V , HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV , HCU6N70S , HCU7NE70S , 10N65 , HFB1N60S , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , HFD2N60U .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

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