HFA9N90 Specs and Replacement

Type Designator: HFA9N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 145 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-247

HFA9N90 substitution

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HFA9N90 datasheet

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HFA9N90

July 2013 BVDSS = 900 V RDS(on) typ HFA9N90 ID = 9.0 A 900V N-Channel MOSFET TO-247 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 55 nC (Typ.) Extended Safe Operating Area Low... See More ⇒

Detailed specifications: HCP12NK65V, HCP20NT60V, HCS12NK65V, HCS20NT60V, HCT7000M, HCT7000MTXV, HCU6N70S, HCU7NE70S, 4N60, HFB1N60S, HFB1N65S, HFB1N70S, HFD1N60S, HFD1N65S, HFD2N60, HFD2N60S, HFD2N60U

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.