HFD4N50 Specs and Replacement

Type Designator: HFD4N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: D-PAK

HFD4N50 substitution

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HFD4N50 datasheet

 ..1. Size:238K  semihow
 hfd4n50.pdf pdf_icon

HFD4N50

July 2005 BVDSS = 500 V RDS(on) typ HFD4N50 / HFU4N50 ID = 2.6 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD4N50 HFU4N50 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.... See More ⇒

 ..2. Size:238K  semihow
 hfd4n50 hfu4n50.pdf pdf_icon

HFD4N50

July 2005 BVDSS = 500 V RDS(on) typ HFD4N50 / HFU4N50 ID = 2.6 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD4N50 HFU4N50 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.... See More ⇒

Detailed specifications: HFD2N60, HFD2N60S, HFD2N60U, HFD2N65S, HFD2N65U, HFD2N70S, HFD2N90, HFD3N80, IRFZ24N, HFD5N40, HFD5N50S, HFD5N50U, HFD5N60S, HFD5N60U, HFD5N65S, HFD5N65U, HFD5N70S

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs