All MOSFET. IXTM40N30 Datasheet

 

IXTM40N30 Datasheet and Replacement


   Type Designator: IXTM40N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 190 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: TO204
 

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IXTM40N30 Datasheet (PDF)

 ..1. Size:107K  ixys
 ixth35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTM40N30

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

 ..2. Size:55K  ixys
 ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTM40N30

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra

 9.1. Size:66K  ixys
 ixtm4n100 ixtm4n100a ixtm4n95 ixtm4n95a ixtp4n100 ixtp4n100a ixtp4n95 ixtp4n95a.pdf pdf_icon

IXTM40N30

 9.2. Size:64K  ixys
 ixtm4n45 ixtm4n45a ixtm4n50 ixtm4n50a ixtp4n45 ixtp4n45a ixtp4n50 ixtp4n50a.pdf pdf_icon

IXTM40N30

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History: FQPF50N06L | IRCP150

Keywords - IXTM40N30 MOSFET datasheet

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 IXTM40N30 equivalent finder
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