HFD630 PDF Specs and Replacement
Type Designator: HFD630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: D-PAK
HFD630 substitution
HFD630 PDF Specs
hfd630 hfu630.pdf
Dec 2012 BVDSS = 200 V RDS(on) typ HFD630 / HFU630 ID = 7.2 A 200V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD630 HFU630 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) ... See More ⇒
Detailed specifications: HFD5N50S , HFD5N50U , HFD5N60S , HFD5N60U , HFD5N65S , HFD5N65U , HFD5N70S , HFD5N70U , IRFZ48N , HFD6N60U , HFD6N65U , HFD6N70U , HFD8N60U , HFD8N65U , HFD8N70U , HFH10N80 , HFH11N90 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
