HFD630 Datasheet and Replacement
Type Designator: HFD630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: D-PAK
HFD630 substitution
HFD630 Datasheet (PDF)
hfd630 hfu630.pdf

Dec 2012BVDSS = 200 VRDS(on) typ HFD630 / HFU630ID = 7.2 A200V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD630 HFU630 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.)
Datasheet: HFD5N50S , HFD5N50U , HFD5N60S , HFD5N60U , HFD5N65S , HFD5N65U , HFD5N70S , HFD5N70U , RU7088R , HFD6N60U , HFD6N65U , HFD6N70U , HFD8N60U , HFD8N65U , HFD8N70U , HFH10N80 , HFH11N90 .
History: TSD5N65M | 8N65KL-TA3-T
Keywords - HFD630 MOSFET datasheet
HFD630 cross reference
HFD630 equivalent finder
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History: TSD5N65M | 8N65KL-TA3-T



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