All MOSFET. HFD630 Datasheet

 

HFD630 MOSFET. Datasheet pdf. Equivalent

Type Designator: HFD630

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 46 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 22 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: D-PAK

HFD630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFD630 Datasheet (PDF)

0.1. hfd630 hfu630.pdf Size:158K _semihow

HFD630
HFD630

Dec 2012 BVDSS = 200 V RDS(on) typ HFD630 / HFU630 ID = 7.2 A 200V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD630 HFU630 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.)

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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