All MOSFET. IXTM42N20 Datasheet

 

IXTM42N20 Datasheet and Replacement


   Type Designator: IXTM42N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO204
 

 IXTM42N20 substitution

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IXTM42N20 Datasheet (PDF)

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IXTM42N20

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 9.1. Size:107K  ixys
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IXTM42N20

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

 9.2. Size:66K  ixys
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IXTM42N20

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IXTM42N20

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Datasheet: IXTM13N80 , IXTM14N80 , IXTM15N60 , IXTM20N60 , IXTM21N50 , IXTM24N50 , IXTM35N30 , IXTM40N30 , 2N60 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A , IXTM6N90 , IXTM6N90A .

History: PN4302 | FXN40N20C

Keywords - IXTM42N20 MOSFET datasheet

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