IXTM42N20 Datasheet and Replacement
Type Designator: IXTM42N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 190 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO204
IXTM42N20 substitution
IXTM42N20 Datasheet (PDF)
ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf
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ixth35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCEP090N20
Keywords - IXTM42N20 MOSFET datasheet
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History: NCEP090N20
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