HFH11N90 Specs and Replacement
Type Designator: HFH11N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 155 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
Package: TO-3P
HFH11N90 substitution
- MOSFET ⓘ Cross-Reference Search
HFH11N90 datasheet
hfh11n90.pdf
Dec 2005 BVDSS = 900 V RDS(on) typ HFH11N90 ID = 11 A 900V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 75 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒
Detailed specifications: HFD630, HFD6N60U, HFD6N65U, HFD6N70U, HFD8N60U, HFD8N65U, HFD8N70U, HFH10N80, EMB04N03H, HFH13N80, HFH18N50S, HFH19N60, HFH6N90, HFH7N80, HFI50N06, HFI640, HFN6N70U
Keywords - HFH11N90 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
