All MOSFET. HFH11N90 Datasheet

 

HFH11N90 Datasheet and Replacement


   Type Designator: HFH11N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO-3P
 

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HFH11N90 Datasheet (PDF)

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HFH11N90

Dec 2005BVDSS = 900 VRDS(on) typ HFH11N90ID = 11 A900V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

Datasheet: HFD630 , HFD6N60U , HFD6N65U , HFD6N70U , HFD8N60U , HFD8N65U , HFD8N70U , HFH10N80 , 2SK3918 , HFH13N80 , HFH18N50S , HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 , HFI640 , HFN6N70U .

History: BLP02N08-BA | IPS060N03LG | BLP039N08-B | SSM6K407TU | NCE60N1K0I | APM3009NU | APM2317AC

Keywords - HFH11N90 MOSFET datasheet

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