HFH13N80 Specs and Replacement
Type Designator: HFH13N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 175 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-3P
HFH13N80 substitution
- MOSFET ⓘ Cross-Reference Search
HFH13N80 datasheet
hfh13n80.pdf
Dec 2005 BVDSS = 800 V RDS(on) typ HFH13N80 ID = 12.6 A 800V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 68 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒
Detailed specifications: HFD6N60U, HFD6N65U, HFD6N70U, HFD8N60U, HFD8N65U, HFD8N70U, HFH10N80, HFH11N90, RU7088R, HFH18N50S, HFH19N60, HFH6N90, HFH7N80, HFI50N06, HFI640, HFN6N70U, HFP10N60S
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
