All MOSFET. HFH13N80 Datasheet

 

HFH13N80 Datasheet and Replacement


   Type Designator: HFH13N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO-3P
 

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HFH13N80 Datasheet (PDF)

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HFH13N80

Dec 2005BVDSS = 800 VRDS(on) typ HFH13N80ID = 12.6 A800V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 68 nC (Typ.) Extended Safe Operating Area Lower RDS(

Datasheet: HFD6N60U , HFD6N65U , HFD6N70U , HFD8N60U , HFD8N65U , HFD8N70U , HFH10N80 , HFH11N90 , MMD60R360PRH , HFH18N50S , HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S .

History: MPGP10R033 | AP60WN4K9H

Keywords - HFH13N80 MOSFET datasheet

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