HFH18N50S Specs and Replacement
Type Designator: HFH18N50S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 239 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
Package: TO-3P
HFH18N50S substitution
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HFH18N50S datasheet
hfh18n50s.pdf
Nov 2009 BVDSS = 500 V RDS(on) typ = 0.220 HFH18N50S ID = 19 A 500V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒
Detailed specifications: HFD6N65U, HFD6N70U, HFD8N60U, HFD8N65U, HFD8N70U, HFH10N80, HFH11N90, HFH13N80, MMIS60R580P, HFH19N60, HFH6N90, HFH7N80, HFI50N06, HFI640, HFN6N70U, HFP10N60S, HFP10N60U
Keywords - HFH18N50S MOSFET specs
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