All MOSFET. HFH18N50S Datasheet

 

HFH18N50S Datasheet and Replacement


   Type Designator: HFH18N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 239 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO-3P
 

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HFH18N50S Datasheet (PDF)

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HFH18N50S

Nov 2009BVDSS = 500 VRDS(on) typ = 0.220 HFH18N50SID = 19 A500V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

Datasheet: HFD6N65U , HFD6N70U , HFD8N60U , HFD8N65U , HFD8N70U , HFH10N80 , HFH11N90 , HFH13N80 , 2N7002 , HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , HFP10N60U .

History: FDP86363F085

Keywords - HFH18N50S MOSFET datasheet

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