All MOSFET. HFH19N60 Datasheet

 

HFH19N60 Datasheet and Replacement


   Type Designator: HFH19N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-3P
 

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HFH19N60 Datasheet (PDF)

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HFH19N60

OCT 2009BVDSS = 600 VRDS(on) typ HFH19N60ID = 18.5 A600V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ.) Extended Safe Operating Area Lower RDS(O

Datasheet: HFD6N70U , HFD8N60U , HFD8N65U , HFD8N70U , HFH10N80 , HFH11N90 , HFH13N80 , HFH18N50S , HY1906P , HFH6N90 , HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , HFP10N60U , HFP10N65S .

History: SI4622DY | VBZL80N03

Keywords - HFH19N60 MOSFET datasheet

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