HFH19N60 Specs and Replacement

Type Designator: HFH19N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-3P

HFH19N60 substitution

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HFH19N60 datasheet

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HFH19N60

OCT 2009 BVDSS = 600 V RDS(on) typ HFH19N60 ID = 18.5 A 600V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 95 nC (Typ.) Extended Safe Operating Area Lower RDS(O... See More ⇒

Detailed specifications: HFD6N70U, HFD8N60U, HFD8N65U, HFD8N70U, HFH10N80, HFH11N90, HFH13N80, HFH18N50S, AOD4184A, HFH6N90, HFH7N80, HFI50N06, HFI640, HFN6N70U, HFP10N60S, HFP10N60U, HFP10N65S

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