All MOSFET. HFH19N60 Datasheet

 

HFH19N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFH19N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 18.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-3P

 HFH19N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFH19N60 Datasheet (PDF)

 ..1. Size:206K  semihow
 hfh19n60.pdf

HFH19N60 HFH19N60

OCT 2009BVDSS = 600 VRDS(on) typ HFH19N60ID = 18.5 A600V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ.) Extended Safe Operating Area Lower RDS(O

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTP4151N3 | NVTFS5116PL

 

 
Back to Top