HFH6N90 Specs and Replacement
Type Designator: HFH6N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-3P
HFH6N90 substitution
- MOSFET ⓘ Cross-Reference Search
HFH6N90 datasheet
hfh6n90.pdf
Mar 2010 BVDSS = 900 V RDS(on) typ HFH6N90 ID = 6.0 A 900V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒
Detailed specifications: HFD8N60U, HFD8N65U, HFD8N70U, HFH10N80, HFH11N90, HFH13N80, HFH18N50S, HFH19N60, AO4407A, HFH7N80, HFI50N06, HFI640, HFN6N70U, HFP10N60S, HFP10N60U, HFP10N65S, HFP10N65U
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
