All MOSFET. HFH6N90 Datasheet

 

HFH6N90 Datasheet and Replacement


   Type Designator: HFH6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-3P
 

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HFH6N90 Datasheet (PDF)

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HFH6N90

Mar 2010BVDSS = 900 VRDS(on) typ HFH6N90ID = 6.0 A900V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

Datasheet: HFD8N60U , HFD8N65U , HFD8N70U , HFH10N80 , HFH11N90 , HFH13N80 , HFH18N50S , HFH19N60 , AO4407A , HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , HFP10N60U , HFP10N65S , HFP10N65U .

History: VBM1405

Keywords - HFH6N90 MOSFET datasheet

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