HFN6N70U MOSFET. Datasheet pdf. Equivalent
Type Designator: HFN6N70U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: SOT-82
HFN6N70U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFN6N70U Datasheet (PDF)
..1. Size:250K semihow
hfn6n70u.pdf
hfn6n70u.pdf
Dec 2012BVDSS = 700 VRDS(on) typ = 1.8 HFN6N70U ID = 6.0 A700V N-Channel MOSFETSOT-82FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lo
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