HFN6N70U Specs and Replacement

Type Designator: HFN6N70U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: SOT-82

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HFN6N70U datasheet

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HFN6N70U

Dec 2012 BVDSS = 700 V RDS(on) typ = 1.8 HFN6N70U ID = 6.0 A 700V N-Channel MOSFET SOT-82 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

Detailed specifications: HFH11N90, HFH13N80, HFH18N50S, HFH19N60, HFH6N90, HFH7N80, HFI50N06, HFI640, IRF730, HFP10N60S, HFP10N60U, HFP10N65S, HFP10N65U, HFP10N80, HFP11N40, HFP12N60S, HFP12N60U

Keywords - HFN6N70U MOSFET specs

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