HFN6N70U Datasheet and Replacement
Type Designator: HFN6N70U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: SOT-82
HFN6N70U substitution
HFN6N70U Datasheet (PDF)
hfn6n70u.pdf

Dec 2012BVDSS = 700 VRDS(on) typ = 1.8 HFN6N70U ID = 6.0 A700V N-Channel MOSFETSOT-82FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lo
Datasheet: HFH11N90 , HFH13N80 , HFH18N50S , HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 , HFI640 , IRFP064N , HFP10N60S , HFP10N60U , HFP10N65S , HFP10N65U , HFP10N80 , HFP11N40 , HFP12N60S , HFP12N60U .
History: 5N65L-TA3-T
Keywords - HFN6N70U MOSFET datasheet
HFN6N70U cross reference
HFN6N70U equivalent finder
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History: 5N65L-TA3-T



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