All MOSFET. IXTM5N100 Datasheet

 

IXTM5N100 Datasheet and Replacement


   Type Designator: IXTM5N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO204
 

 IXTM5N100 substitution

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IXTM5N100 Datasheet (PDF)

 0.1. Size:104K  ixys
 ixth5n100-a ixtm5n100-a.pdf pdf_icon

IXTM5N100

VDSS ID25 RDS(on)Standard IXTH / IXTM 5N100 1000 V 5 A 2.4 Power MOSFETIXTH / IXTM 5N100A 1000 V 5 A 2.0 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25

 9.1. Size:111K  ixys
 ixth50n20 ixtm50n20.pdf pdf_icon

IXTM5N100

IXTH 50N20 VDSS = 200 VMegaMOSTMFETIXTM 50N20 ID25 = 50 ARDS(on) = 45 mN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C50 ATO-204 AE (IXTM)IDM TC = 25C, pulse width limited b

 9.2. Size:378K  ixys
 ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf pdf_icon

IXTM5N100

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Datasheet: IXTM15N60 , IXTM20N60 , IXTM21N50 , IXTM24N50 , IXTM35N30 , IXTM40N30 , IXTM42N20 , IXTM50N20 , IRF2807 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A , IXTM6N90 , IXTM6N90A , IXTM75N10 , IXTN21N100 .

History: IXTM5N100A

Keywords - IXTM5N100 MOSFET datasheet

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