All MOSFET. HFP18N50U Datasheet

 

HFP18N50U Datasheet and Replacement


   Type Designator: HFP18N50U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 236 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO-220
 

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HFP18N50U Datasheet (PDF)

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HFP18N50U

Apr 2014BVDSS = 500 VRDS(on) typ = 0.22 HFP18N50U ID = 18 A500V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Low

Datasheet: HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U , HFP13N50S , HFP13N50U , HFP13N60U , HFP13N65U , IRF630 , HFP2N60S , HFP2N60U , HFP2N65S , HFP2N65U , HFP2N70S , HFP2N90 , HFP3N80 , HFP4N50 .

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