HFP18N50U Specs and Replacement

Type Designator: HFP18N50U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 236 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm

Package: TO-220

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HFP18N50U datasheet

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HFP18N50U

Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFP18N50U ID = 18 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Low... See More ⇒

Detailed specifications: HFP12N60S, HFP12N60U, HFP12N65S, HFP12N65U, HFP13N50S, HFP13N50U, HFP13N60U, HFP13N65U, IRF640N, HFP2N60S, HFP2N60U, HFP2N65S, HFP2N65U, HFP2N70S, HFP2N90, HFP3N80, HFP4N50

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