All MOSFET. HFP3N80 Datasheet

 

HFP3N80 Datasheet and Replacement


   Type Designator: HFP3N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO-220
 

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HFP3N80 Datasheet (PDF)

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HFP3N80

Dec 2005BVDSS = 800 VRDS(on) typ = 4.0 HFP3N80ID = 3.0 A800V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Unrivalled Gate Charge : 17 nC (Typ ) Exten

Datasheet: HFP13N65U , HFP18N50U , HFP2N60S , HFP2N60U , HFP2N65S , HFP2N65U , HFP2N70S , HFP2N90 , IRFP250N , HFP4N50 , HFP4N90 , HFP5N50S , HFP5N50U , HFP5N60S , HFP5N60U , HFP5N65S , HFP5N65U .

History: R5019ANJ | P2806BV

Keywords - HFP3N80 MOSFET datasheet

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