HFP3N80 Specs and Replacement

Type Designator: HFP3N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-220

HFP3N80 substitution

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HFP3N80 datasheet

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HFP3N80

Dec 2005 BVDSS = 800 V RDS(on) typ = 4.0 HFP3N80 ID = 3.0 A 800V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Unrivalled Gate Charge 17 nC (Typ ) Exten... See More ⇒

Detailed specifications: HFP13N65U, HFP18N50U, HFP2N60S, HFP2N60U, HFP2N65S, HFP2N65U, HFP2N70S, HFP2N90, IRFB4115, HFP4N50, HFP4N90, HFP5N50S, HFP5N50U, HFP5N60S, HFP5N60U, HFP5N65S, HFP5N65U

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs