IXTM6N80 Specs and Replacement

Type Designator: IXTM6N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO204

IXTM6N80 substitution

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IXTM6N80 datasheet

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IXTM6N80

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A TO... See More ⇒

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IXTM6N80

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IXTM6N80

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C6 A T... See More ⇒

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Detailed specifications: IXTM24N50, IXTM35N30, IXTM40N30, IXTM42N20, IXTM50N20, IXTM5N100, IXTM5N100A, IXTM67N10, 2N60, IXTM6N80A, IXTM6N90, IXTM6N90A, IXTM75N10, IXTN21N100, IXTP15N25MA, IXTP15N25MB, IXTP15N30MA

Keywords - IXTM6N80 MOSFET specs

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