All MOSFET. IXTM6N80 Datasheet

 

IXTM6N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTM6N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO204

 IXTM6N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTM6N80 Datasheet (PDF)

 0.1. Size:102K  ixys
 ixth6n80-a ixtm6n80-a.pdf

IXTM6N80 IXTM6N80

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C6 ATO

 8.1. Size:63K  ixys
 ixtm6n60 ixtm6n60a ixtp6n60 ixtp6n60a.pdf

IXTM6N80

 8.2. Size:104K  ixys
 ixth6n90-a ixtm6n90-a.pdf

IXTM6N80 IXTM6N80

VDSS ID25 RDS(on)StandardIXTH / IXTM 6N90 900 V 6 A 1.8 Power MOSFETIXTH / IXTM 6N90A 900 V 6 A 1.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C6 AT

Datasheet: IXTM24N50 , IXTM35N30 , IXTM40N30 , IXTM42N20 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , 8205A , IXTM6N80A , IXTM6N90 , IXTM6N90A , IXTM75N10 , IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA .

 

 
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