HFP9N50 Specs and Replacement

Type Designator: HFP9N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: TO-220

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HFP9N50 datasheet

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HFP9N50

June 2005 BVDSS = 500 V RDS(on) typ HFP9N50 ID = 9.0 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(O... See More ⇒

Detailed specifications: HFP6N90, HFP730S, HFP730U, HFP8N60S, HFP8N60U, HFP8N65S, HFP8N65U, HFP8N70U, K4145, HFS10N60S, HFS10N60U, HFS10N65S, HFS10N65U, HFS10N80, HFS11N40, HFS12N60S, HFS12N60U

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