All MOSFET. HFP9N50 Datasheet

 

HFP9N50 Datasheet and Replacement


   Type Designator: HFP9N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO-220
 

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HFP9N50 Datasheet (PDF)

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HFP9N50

June 2005BVDSS = 500 VRDS(on) typ HFP9N50ID = 9.0 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(O

Datasheet: HFP6N90 , HFP730S , HFP730U , HFP8N60S , HFP8N60U , HFP8N65S , HFP8N65U , HFP8N70U , IRFB3607 , HFS10N60S , HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S , HFS12N60U .

History: AON7262E | RU1H190S | VN2406D | IRFS9541 | RJK0655DPB | NCE5520Q | NVMFS5C628NL

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