All MOSFET. HFS3N80 Datasheet

 

HFS3N80 Datasheet and Replacement


   Type Designator: HFS3N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO-220F
 

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HFS3N80 Datasheet (PDF)

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HFS3N80

Dec 2005BVDSS = 800 VRDS(on) typ HFS3N80ID = 3.0 A800V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area

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HFS3N80

July 2022BVDSS = 800 VRDS(on) Typ = 3.5 HFS3N80AID = 3.0 A800V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.) Extended Safe Opera

Datasheet: HFS18N50U , HFS2N60 , HFS2N60S , HFS2N60U , HFS2N65S , HFS2N65U , HFS2N70S , HFS2N90 , IRF2807 , HFS4N50 , HFS4N60 , HFS4N90 , HFS50N06 , HFS5N50S , HFS5N50U , HFS5N60S , HFS5N60U .

Keywords - HFS3N80 MOSFET datasheet

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