HFS3N80 Specs and Replacement
Type Designator: HFS3N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-220F
HFS3N80 substitution
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HFS3N80 datasheet
hfs3n80.pdf
Dec 2005 BVDSS = 800 V RDS(on) typ HFS3N80 ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area ... See More ⇒
hfs3n80a.pdf
July 2022 BVDSS = 800 V RDS(on) Typ = 3.5 HFS3N80A ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 20 nC (Typ.) Extended Safe Opera... See More ⇒
Detailed specifications: HFS18N50U , HFS2N60 , HFS2N60S , HFS2N60U , HFS2N65S , HFS2N65U , HFS2N70S , HFS2N90 , RFP50N06 , HFS4N50 , HFS4N60 , HFS4N90 , HFS50N06 , HFS5N50S , HFS5N50U , HFS5N60S , HFS5N60U .
Keywords - HFS3N80 MOSFET specs
HFS3N80 cross reference
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HFS3N80 substitution
HFS3N80 replacement
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