All MOSFET. HFS4N90 Datasheet

 

HFS4N90 Datasheet and Replacement


   Type Designator: HFS4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220F
 

 HFS4N90 substitution

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HFS4N90 Datasheet (PDF)

 ..1. Size:191K  semihow
 hfs4n90.pdf pdf_icon

HFS4N90

March 2014BVDSS = 900 VRDS(on) typ HFS4N90ID = 4.0 A900V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area

 9.1. Size:406K  semihow
 hfp4n60f hfs4n60f.pdf pdf_icon

HFS4N90

Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 9.2. Size:177K  semihow
 hfs4n60.pdf pdf_icon

HFS4N90

July 2005BVDSS = 600 VRDS(on) typ HFS4N60ID = 4.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(

 9.3. Size:236K  semihow
 hfs4n50.pdf pdf_icon

HFS4N90

July 2005BVDSS = 500 VRDS(on) typ HFS4N50ID = 3.4 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lo

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Datasheet: HFS2N60U , HFS2N65S , HFS2N65U , HFS2N70S , HFS2N90 , HFS3N80 , HFS4N50 , HFS4N60 , 75N75 , HFS50N06 , HFS5N50S , HFS5N50U , HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S .

History: NCE6802 | IXFK150N30P3 | IPD90N03S4L-03

Keywords - HFS4N90 MOSFET datasheet

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