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HFS4N90 Spec and Replacement


   Type Designator: HFS4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220F

 HFS4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFS4N90 Specs

 ..1. Size:191K  semihow
 hfs4n90.pdf pdf_icon

HFS4N90

March 2014 BVDSS = 900 V RDS(on) typ HFS4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 30 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 9.1. Size:406K  semihow
 hfp4n60f hfs4n60f.pdf pdf_icon

HFS4N90

Oct 2016 HFP4N60F / HFS4N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC RoHS Compliant HFP4N60F HFS4N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

 9.2. Size:177K  semihow
 hfs4n60.pdf pdf_icon

HFS4N90

July 2005 BVDSS = 600 V RDS(on) typ HFS4N60 ID = 4.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

 9.3. Size:236K  semihow
 hfs4n50.pdf pdf_icon

HFS4N90

July 2005 BVDSS = 500 V RDS(on) typ HFS4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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Detailed specifications: HFS2N60U , HFS2N65S , HFS2N65U , HFS2N70S , HFS2N90 , HFS3N80 , HFS4N50 , HFS4N60 , 18N50 , HFS50N06 , HFS5N50S , HFS5N50U , HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S .

History: MRF177M | IPP110N20NA

Keywords - HFS4N90 MOSFET specs

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