All MOSFET. HFS630 Datasheet

 

HFS630 Datasheet and Replacement


   Type Designator: HFS630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

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HFS630 Datasheet (PDF)

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HFS630

July 2005BVDSS = 200 VRDS(on) typ HFS630ID = 9 A200V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

Datasheet: HFS5N50S , HFS5N50U , HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 , RU6888R , HFS640 , HFS6N60U , HFS6N65U , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 .

History: SI9433BDY | IXFK66N50Q2

Keywords - HFS630 MOSFET datasheet

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