All MOSFET. HFS7N80 Datasheet

 

HFS7N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: HFS7N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm

Package: TO-220F

HFS7N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFS7N80 Datasheet (PDF)

1.1. hfs7n80.pdf Size:213K _update_mosfet

HFS7N80 HFS7N80

July 2005 BVDSS = 800 V RDS(on) typ = 1.55 HFS7N80 ID = 7.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) E

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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