All MOSFET. HFS7N80 Datasheet

 

HFS7N80 Datasheet and Replacement


   Type Designator: HFS7N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-220F
 

 HFS7N80 substitution

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HFS7N80 Datasheet (PDF)

 ..1. Size:213K  semihow
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HFS7N80

July 2005BVDSS = 800 VRDS(on) typ = 1.55 HFS7N80ID = 7.0 A800V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) E

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HFS7N80

June 2021BVDSS = 800 VRDS(on) Typ = 1.55 HFS7N80AID = 7.0 A800V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Oper

Datasheet: HFS640 , HFS6N60U , HFS6N65U , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , AON7403 , HFS830 , HFS840 , HFS8N60S , HFS8N60U , HFS8N65S , HFS8N65U , HFS8N70S , HFS8N70U .

History: PSMN6R9-100YSF | SI7997DP

Keywords - HFS7N80 MOSFET datasheet

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