HFS840 Specs and Replacement

Type Designator: HFS840

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220F

HFS840 substitution

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HFS840 datasheet

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 hfs840.pdf pdf_icon

HFS840

Dec 2017 BVDSS = 500 V RDS(on) typ = 0.7 HFS840 ID = 9.0 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 25 nC (Typ.) Ex... See More ⇒

Detailed specifications: HFS6N65U, HFS6N70U, HFS6N90, HFS730, HFS730U, HFS740, HFS7N80, HFS830, AON7403, HFS8N60S, HFS8N60U, HFS8N65S, HFS8N65U, HFS8N70S, HFS8N70U, HFS8N80, HFS9N50

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