HFS840 Datasheet and Replacement
Type Designator: HFS840
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
HFS840 substitution
HFS840 Datasheet (PDF)
hfs840.pdf

Dec 2017 BVDSS = 500 V RDS(on) typ = 0.7 HFS840 ID = 9.0 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Ex
Datasheet: HFS6N65U , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HY1906P , HFS8N60S , HFS8N60U , HFS8N65S , HFS8N65U , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 .
History: DH033N03R | IXTA1R6N100D2 | SIHFP22N60K | HSM3115 | MTP3403N3 | UPA2755GR | HSM3206
Keywords - HFS840 MOSFET datasheet
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History: DH033N03R | IXTA1R6N100D2 | SIHFP22N60K | HSM3115 | MTP3403N3 | UPA2755GR | HSM3206



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