IXTN21N100 Datasheet and Replacement
Type Designator: IXTN21N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 250 nC
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 630 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT227
IXTN21N100 substitution
IXTN21N100 Datasheet (PDF)
ixtk21n100 ixtn21n100.pdf
IXTK 21N100 VDSS = 1000 VHigh VoltageIXTN 21N100 ID25 = 21 AMegaMOSTMFETsRDS(on) = 0.55 N-Channel, Enhancement ModeTO-264 AA (IXTK)Symbol Test Conditions Maximum RatingsIXTK IXTNVDSS TJ = 25C to 150C 1000 1000 VGD (TAB)DVDGR TJ = 25C to 150C; RGS = 1 M 1000 1000 VSVGS Continuous 20 20 VminiBLOC, SOT-227 BVGSM Transient 30
ixtn210p10t.pdf
Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M
ixtn200n10l2.pdf
Advance Technical Information Linear L2TM Power VDSS = 100V IXTN200N10L2 MOSFET w/ Extended ID25 = 178A FBSOA RDS(on) 11m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C, RGS = 1M 100 V
Datasheet: IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A , IXTM6N90 , IXTM6N90A , IXTM75N10 , IRF730 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB , IXTP1N100 , IXTP22N15MA , IXTP22N15MB , IXTP22N20MA .
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