IXTN21N100 Specs and Replacement
Type Designator: IXTN21N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT227
IXTN21N100 substitution
- MOSFET ⓘ Cross-Reference Search
IXTN21N100 datasheet
ixtk21n100 ixtn21n100.pdf
IXTK 21N100 VDSS = 1000 V High Voltage IXTN 21N100 ID25 = 21 A MegaMOSTMFETs RDS(on) = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25 C to 150 C 1000 1000 V G D (TAB) D VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 1000 V S VGS Continuous 20 20 V miniBLOC, SOT-227 B VGSM Transient 30... See More ⇒
ixtn210p10t.pdf
Advance Technical Information TrenchPTM VDSS = -100V IXTN210P10T Power MOSFET ID25 = - 210A RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C -100 V D VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒
ixtn200n10l2.pdf
Advance Technical Information Linear L2TM Power VDSS = 100V IXTN200N10L2 MOSFET w/ Extended ID25 = 178A FBSOA RDS(on) 11m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C, RGS = 1M 100 V ... See More ⇒
Detailed specifications: IXTM5N100, IXTM5N100A, IXTM67N10, IXTM6N80, IXTM6N80A, IXTM6N90, IXTM6N90A, IXTM75N10, IRFB31N20D, IXTP15N25MA, IXTP15N25MB, IXTP15N30MA, IXTP15N30MB, IXTP1N100, IXTP22N15MA, IXTP22N15MB, IXTP22N20MA
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
