HFT1N60S Specs and Replacement
Type Designator: HFT1N60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SOT-223
HFT1N60S substitution
- MOSFET ⓘ Cross-Reference Search
HFT1N60S datasheet
hft1n60s.pdf
Dec 2009 BVDSS = 600 V RDS(on) typ HFT1N60S ID = 0.2 A 600V N-Channel MOSFET SOT-223 2 FEATURES 3 Originative New Design 1 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒
hft1n60f.pdf
Oct 2016 HFT1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant SOT-223 Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value U... See More ⇒
Detailed specifications: HFS8N60S, HFS8N60U, HFS8N65S, HFS8N65U, HFS8N70S, HFS8N70U, HFS8N80, HFS9N50, AO4468, HFU630, HFW10N60S, HFW11N40, HFW12N60S, HFW50N06, HFW5N50S, HFW5N60S, HFW5N65S
Keywords - HFT1N60S MOSFET specs
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