All MOSFET. HFU630 Datasheet

 

HFU630 Datasheet and Replacement


   Type Designator: HFU630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: I-PAK
 

 HFU630 substitution

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HFU630 Datasheet (PDF)

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HFU630

Dec 2012BVDSS = 200 VRDS(on) typ HFD630 / HFU630ID = 7.2 A200V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD630 HFU630 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.)

Datasheet: HFS8N60U , HFS8N65S , HFS8N65U , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 , HFT1N60S , IRFP064N , HFW10N60S , HFW11N40 , HFW12N60S , HFW50N06 , HFW5N50S , HFW5N60S , HFW5N65S , HFW5N65U .

History: NCEP2390D

Keywords - HFU630 MOSFET datasheet

 HFU630 cross reference
 HFU630 equivalent finder
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