HFW12N60S Specs and Replacement

Type Designator: HFW12N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: D2-PAK

HFW12N60S substitution

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HFW12N60S datasheet

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HFW12N60S

Jan 2013 BVDSS = 600 V RDS(on) typ = 0.53 HFW12N60S ID = 12 A 600V N-Channel MOSFET D2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒

Detailed specifications: HFS8N70S, HFS8N70U, HFS8N80, HFS9N50, HFT1N60S, HFU630, HFW10N60S, HFW11N40, IRF740, HFW50N06, HFW5N50S, HFW5N60S, HFW5N65S, HFW5N65U, HFW640, HFW6N90, HFW8N65U

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