HFW50N06 Specs and Replacement
Type Designator: HFW50N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 40 nC
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: D2-PAK
HFW50N06 substitution
- MOSFET ⓘ Cross-Reference Search
HFW50N06 datasheet
hfi50n06 hfw50n06.pdf
Nov 2009 BVDSS = 60 V RDS(on) = 18 m HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW50N06 HFI50N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operati... See More ⇒
hfi50n06a hfw50n06a.pdf
Oct 2016 HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFI50N06A HFW50N06A Symbol TO-262 TO-263 D S ... See More ⇒
Detailed specifications: HFS8N70U, HFS8N80, HFS9N50, HFT1N60S, HFU630, HFW10N60S, HFW11N40, HFW12N60S, IRF840, HFW5N50S, HFW5N60S, HFW5N65S, HFW5N65U, HFW640, HFW6N90, HFW8N65U, HFW9N50
Keywords - HFW50N06 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
