All MOSFET. HFW50N06 Datasheet

 

HFW50N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFW50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: D2-PAK

 HFW50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFW50N06 Datasheet (PDF)

 ..1. Size:237K  semihow
hfi50n06 hfw50n06.pdf

HFW50N06
HFW50N06

Nov 2009BVDSS = 60 VRDS(on) = 18 mHFW50N06 / HFI50N06ID = 50 A60V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW50N06 HFI50N06 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operati

 0.1. Size:418K  semihow
hfi50n06a hfw50n06a.pdf

HFW50N06
HFW50N06

Oct 2016HFI50N06A / HFW50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFI50N06A HFW50N06ASymbolTO-262 TO-263DS

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