All MOSFET. HFW640 Datasheet

 

HFW640 Datasheet and Replacement


   Type Designator: HFW640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: D2-PAK
 

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HFW640 Datasheet (PDF)

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HFW640

Mar 2008BVDSS = 200 VRDS(on) typ HFW640 / HFI640ID = 18 A200V N-Channel MOSFETD2-PAK I2-PAK2FEATURES13 123 Originative New DesignHFW640 HFI640 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.)

Datasheet: HFW10N60S , HFW11N40 , HFW12N60S , HFW50N06 , HFW5N50S , HFW5N60S , HFW5N65S , HFW5N65U , IRF640 , HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 .

History: FCPF850N80Z

Keywords - HFW640 MOSFET datasheet

 HFW640 cross reference
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