HFW640 MOSFET. Datasheet pdf. Equivalent
Type Designator: HFW640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: D2-PAK
HFW640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFW640 Datasheet (PDF)
hfi640 hfw640.pdf
Mar 2008BVDSS = 200 VRDS(on) typ HFW640 / HFI640ID = 18 A200V N-Channel MOSFETD2-PAK I2-PAK2FEATURES13 123 Originative New DesignHFW640 HFI640 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.)
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