HFW6N90 Specs and Replacement

Type Designator: HFW6N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: D2-PAK

HFW6N90 substitution

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HFW6N90 datasheet

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HFW6N90

March 2013 BVDSS = 900 V RDS(on) typ = 1.95 HFW6N90 / HFI6N90 ID = 6.0 A 900V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW6N90 HFI6N90 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended ... See More ⇒

Detailed specifications: HFW11N40, HFW12N60S, HFW50N06, HFW5N50S, HFW5N60S, HFW5N65S, HFW5N65U, HFW640, IRFZ44, HFW8N65U, HFW9N50, HP8KA1, HRD13N10K, HRP75N75V, HRS75N75V, HS8K11, HT-3201

Keywords - HFW6N90 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs