All MOSFET. HFW6N90 Datasheet

 

HFW6N90 Datasheet and Replacement


   Type Designator: HFW6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: D2-PAK
 

 HFW6N90 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HFW6N90 Datasheet (PDF)

 ..1. Size:185K  semihow
 hfw6n90.pdf pdf_icon

HFW6N90

March 2013BVDSS = 900 VRDS(on) typ = 1.95 HFW6N90 / HFI6N90ID = 6.0 A900V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW6N90 HFI6N90 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended

Datasheet: HFW11N40 , HFW12N60S , HFW50N06 , HFW5N50S , HFW5N60S , HFW5N65S , HFW5N65U , HFW640 , IRFZ44 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 , HT-3201 .

History: 10N80B | FDMS86350 | WMJ9N150D1 | CS3205 | STP160N3LL | AOD4128 | NTGS3443T1G

Keywords - HFW6N90 MOSFET datasheet

 HFW6N90 cross reference
 HFW6N90 equivalent finder
 HFW6N90 lookup
 HFW6N90 substitution
 HFW6N90 replacement

 

 
Back to Top

 


 
.