HFW8N65U Specs and Replacement

Type Designator: HFW8N65U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 22 nC

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: D2-PAK

HFW8N65U substitution

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HFW8N65U datasheet

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HFW8N65U

Jan 2013 BVDSS = 650 V RDS(on) typ HFW8N65U / HFI8N65U ID = 7.5 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology HFW8N65U HFI8N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Ext... See More ⇒

Detailed specifications: HFW12N60S, HFW50N06, HFW5N50S, HFW5N60S, HFW5N65S, HFW5N65U, HFW640, HFW6N90, IRF640, HFW9N50, HP8KA1, HRD13N10K, HRP75N75V, HRS75N75V, HS8K11, HT-3201, HTMN5130SSD

Keywords - HFW8N65U MOSFET specs

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