All MOSFET. HFW9N50 Datasheet

 

HFW9N50 Datasheet and Replacement


   Type Designator: HFW9N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: D2-PAK
 

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HFW9N50 Datasheet (PDF)

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HFW9N50

June 2005BVDSS = 500 VRDS(on) typ HFW9N50 / HFI9N50ID = 9.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW9N50 HFI9N50 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Op

Datasheet: HFW50N06 , HFW5N50S , HFW5N60S , HFW5N65S , HFW5N65U , HFW640 , HFW6N90 , HFW8N65U , IRF1404 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 , HT-3201 , HTMN5130SSD , HUF75329D3ST .

History: IPI120N10S4-03 | FHF2N65D

Keywords - HFW9N50 MOSFET datasheet

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