HFW9N50 Specs and Replacement

Type Designator: HFW9N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: D2-PAK

HFW9N50 substitution

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HFW9N50 datasheet

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HFW9N50

June 2005 BVDSS = 500 V RDS(on) typ HFW9N50 / HFI9N50 ID = 9.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW9N50 HFI9N50 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Op... See More ⇒

Detailed specifications: HFW50N06, HFW5N50S, HFW5N60S, HFW5N65S, HFW5N65U, HFW640, HFW6N90, HFW8N65U, IRF1404, HP8KA1, HRD13N10K, HRP75N75V, HRS75N75V, HS8K11, HT-3201, HTMN5130SSD, HUF75329D3ST

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.