HRD13N10K Specs and Replacement

Type Designator: HRD13N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: D-PAK

HRD13N10K substitution

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HRD13N10K datasheet

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HRD13N10K

Dec 2013 BVDSS = 100 V RDS(on) typ = 85 HRD13N10K / HRU13N10K ID = 3.5 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD13N10K HRU13N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 20 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 8... See More ⇒

Detailed specifications: HFW5N60S, HFW5N65S, HFW5N65U, HFW640, HFW6N90, HFW8N65U, HFW9N50, HP8KA1, IRFB4110, HRP75N75V, HRS75N75V, HS8K11, HT-3201, HTMN5130SSD, HUF75329D3ST, HUF75332S3ST, HUF75337S3

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs