HRP75N75V Specs and Replacement

Type Designator: HRP75N75V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-220

HRP75N75V substitution

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HRP75N75V datasheet

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HRP75N75V

Fab 2014 BVDSS = 70 V RDS(on) typ = 6 HRP75N75V ID = 48 A 70V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 6.0 (Typ.) @VGS=10V 100% Avalanche Tested Abso... See More ⇒

Detailed specifications: HFW5N65S, HFW5N65U, HFW640, HFW6N90, HFW8N65U, HFW9N50, HP8KA1, HRD13N10K, IRF640N, HRS75N75V, HS8K11, HT-3201, HTMN5130SSD, HUF75329D3ST, HUF75332S3ST, HUF75337S3, HUF75343S3

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