HS8K11 Specs and Replacement

Type Designator: HS8K11

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0179 Ohm

Package: HSML3030L10

HS8K11 substitution

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HS8K11 datasheet

 ..1. Size:3861K  rohm
 hs8k11.pdf pdf_icon

HS8K11

HS8K11 Datasheet 30V Nch+Nch Power MOSFET lOutline l HSML3030L10 Symbol Tr1 Nch Tr2 Nch VDSS 30V 30V RDS(on)(Max.) 17.9m 13.3m ID 7A 11A PD 2W lFeatures l lInner circuit l 1) Low on - resistance. 2) Pb-free lead plating ; RoHS compliant. 3) Halogen Fr... See More ⇒

Detailed specifications: HFW640, HFW6N90, HFW8N65U, HFW9N50, HP8KA1, HRD13N10K, HRP75N75V, HRS75N75V, AO3400, HT-3201, HTMN5130SSD, HUF75329D3ST, HUF75332S3ST, HUF75337S3, HUF75343S3, HUF75343S3ST, HUF75344A3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.