HS8K11 Datasheet and Replacement
Type Designator: HS8K11
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.8 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0179 Ohm
Package: HSML3030L10
HS8K11 substitution
HS8K11 Datasheet (PDF)
hs8k11.pdf
HS8K11Datasheet30V Nch+Nch Power MOSFETlOutlinel HSML3030L10Symbol Tr1:Nch Tr2:NchVDSS 30V 30V RDS(on)(Max.) 17.9m 13.3m ID 7A 11A PD 2W lFeaturesllInner circuitl1) Low on - resistance.2) Pb-free lead plating ; RoHS compliant.3) Halogen Fr
Datasheet: HFW640 , HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , AO3400 , HT-3201 , HTMN5130SSD , HUF75329D3ST , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , HUF75344A3 .
History: RJK1002DPP-E0
Keywords - HS8K11 MOSFET datasheet
HS8K11 cross reference
HS8K11 equivalent finder
HS8K11 lookup
HS8K11 substitution
HS8K11 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: RJK1002DPP-E0
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