HT-3201 Datasheet and Replacement
Type Designator: HT-3201
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2000 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 433 A
Tj ⓘ - Maximum Junction Temperature: 225 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 1540 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: MODULE
HT-3201 substitution
HT-3201 Datasheet (PDF)
ht-3201.pdf

PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m Industry standard footprint High temperature: T = 225 C c(max)T = 225 C J(max) AS9100:Rev. C-certified manufacturing, traceable throughout value chain Ultra-fast switching (
Datasheet: HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 , AON6414A , HTMN5130SSD , HUF75329D3ST , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , HUF75344A3 , HUF75345S3 .
History: BLF6G38-100 | 2SK3863 | P55NF06 | SIE810DF | SSF8NP60U | IPB90N04S4-02 | FDA69N25
Keywords - HT-3201 MOSFET datasheet
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History: BLF6G38-100 | 2SK3863 | P55NF06 | SIE810DF | SSF8NP60U | IPB90N04S4-02 | FDA69N25



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