All MOSFET. HT-3201 Datasheet

 

HT-3201 Datasheet and Replacement


   Type Designator: HT-3201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 433 A
   Tj ⓘ - Maximum Junction Temperature: 225 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: MODULE
 

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HT-3201 Datasheet (PDF)

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HT-3201

PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m Industry standard footprint High temperature: T = 225 C c(max)T = 225 C J(max) AS9100:Rev. C-certified manufacturing, traceable throughout value chain Ultra-fast switching (

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