All MOSFET. HT-3201 Datasheet

 

HT-3201 MOSFET. Datasheet pdf. Equivalent

Type Designator: HT-3201

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2000 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.25 V

Maximum Drain Current |Id|: 433 A

Maximum Junction Temperature (Tj): 225 °C

Total Gate Charge (Qg): 1.253 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 1540 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm

Package: MODULE

HT-3201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HT-3201 Datasheet (PDF)

0.1. ht-3201.pdf Size:756K _apei

HT-3201
HT-3201

 PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m  Industry standard footprint  High temperature: T = 225 C c(max) T = 225 C J(max)  AS9100:Rev. C-certified manufacturing, traceable throughout value chain  Ultra-fast switching (<30 ns), low inductance  Enables hi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top