All MOSFET. HT-3201 Datasheet

 

HT-3201 MOSFET. Datasheet pdf. Equivalent

Type Designator: HT-3201

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2000 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.25 V

Maximum Drain Current |Id|: 433 A

Maximum Junction Temperature (Tj): 225 °C

Total Gate Charge (Qg): 1.253 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 1540 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm

Package: MODULE

HT-3201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HT-3201 Datasheet (PDF)

0.1. ht-3201.pdf Size:756K _apei

HT-3201
HT-3201

 PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m  Industry standard footprint  High temperature: T = 225 C c(max) T = 225 C J(max)  AS9100:Rev. C-certified manufacturing, traceable throughout value chain  Ultra-fast switching (<30 ns), low inductance  Enables hi

Datasheet: HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 , IRFP250 , HTMN5130SSD , HUF75329D3ST , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , HUF75344A3 , HUF75345S3 .

 

 
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