HT-3201 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HT-3201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.25 V
   |Id|ⓘ - Maximum Drain Current: 433 A
   Tjⓘ - Maximum Junction Temperature: 225 °C
   Qgⓘ - Total Gate Charge: 1.253 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: MODULE

HT-3201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS