HT-3201 MOSFET. Datasheet pdf. Equivalent
Type Designator: HT-3201
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2000 W
Maximum Drain-Source Voltage |Vds|: 1200 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.25 V
Maximum Drain Current |Id|: 433 A
Maximum Junction Temperature (Tj): 225 °C
Total Gate Charge (Qg): 1.253 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 1540 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm
Package: MODULE
HT-3201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HT-3201 Datasheet (PDF)
0.1. ht-3201.pdf 
Size:756K _apei
PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m Industry standard footprint High temperature: T = 225 C c(max) T = 225 C J(max) AS9100:Rev. C-certified manufacturing, traceable throughout value chain Ultra-fast switching (<30 ns), low inductance Enables hi
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