HT-3201 PDF and Equivalents Search

 

HT-3201 Specs and Replacement

Type Designator: HT-3201

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2000 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 433 A

Tj ⓘ - Maximum Junction Temperature: 225 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 1540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: MODULE

HT-3201 substitution

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HT-3201 datasheet

 ..1. Size:756K  apei
 ht-3201.pdf pdf_icon

HT-3201

PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m Industry standard footprint High temperature T = 225 C c(max) T = 225 C J(max) AS9100 Rev. C-certified manufacturing, traceable throughout value chain Ultra-fast switching (... See More ⇒

Detailed specifications: HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 , IRFB4227 , HTMN5130SSD , HUF75329D3ST , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , HUF75344A3 , HUF75345S3 .

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