HT-3201 MOSFET Datasheet: N-Ch, 1200V, 433A. Full specification with pinout and replacement list

HT-3201 Specs and Replacement

   Type Designator: HT-3201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 433 A
   Tj ⓘ - Maximum Junction Temperature: 225 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: MODULE

HT-3201 substitution

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HT-3201 datasheet

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PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m Industry standard footprint High temperature T = 225 C c(max) T = 225 C J(max) AS9100 Rev. C-certified manufacturing, traceable throughout value chain Ultra-fast switching (... See More ⇒

Detailed specifications: HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 , IRFB4227 , HTMN5130SSD , HUF75329D3ST , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , HUF75344A3 , HUF75345S3 .