All MOSFET. HTMN5130SSD Datasheet

 

HTMN5130SSD Datasheet and Replacement


   Type Designator: HTMN5130SSD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 97.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SO-8
 

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HTMN5130SSD Datasheet (PDF)

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HTMN5130SSD

HTMN5130SSD55V DUAL N-CHANNEL 175C MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 130m @ VGS = 10V 2.86 A 55V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 200m @ VGS = 4.5V 2.3 A Halogen and Antimony Free. Green Device (Note 3) Qua

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