HTMN5130SSD Specs and Replacement
Type Designator: HTMN5130SSD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 97.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SO-8
HTMN5130SSD substitution
- MOSFET ⓘ Cross-Reference Search
HTMN5130SSD datasheet
htmn5130ssd.pdf
HTMN5130SSD 55V DUAL N-CHANNEL 175 C MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 130m @ VGS = 10V 2.86 A 55V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 200m @ VGS = 4.5V 2.3 A Halogen and Antimony Free. Green Device (Note 3) Qua... See More ⇒
Detailed specifications: HFW8N65U, HFW9N50, HP8KA1, HRD13N10K, HRP75N75V, HRS75N75V, HS8K11, HT-3201, IRF3710, HUF75329D3ST, HUF75332S3ST, HUF75337S3, HUF75343S3, HUF75343S3ST, HUF75344A3, HUF75345S3, HUF75345S3ST
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