HUF76445S3ST PDF and Equivalents Search

 ..1. Size:207K  fairchild semi
 huf76445s3st.pdf

HUF76445P3, HUF76445S3S Data Sheet December 2001 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.0065 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.0075 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE ... See More ⇒

 6.1. Size:214K  fairchild semi
 huf76445p3-s3s.pdf

HUF76445P3, HUF76445S3S Data Sheet December 2001 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.0065 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.0075 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE ... See More ⇒

 7.1. Size:217K  fairchild semi
 huf76443p3-s3s.pdf

HUF76443P3, HUF76443S3S Data Sheet December 2001 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.008 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.0095 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE E... See More ⇒

 8.1. Size:209K  fairchild semi
 huf76439s3st.pdf

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical ... See More ⇒

 8.2. Size:346K  fairchild semi
 huf76429d f085.pdf

HUFA76429D3ST_F085 Data Sheet September 2010 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features Ultra Low On-Resistance JEDEC TO-252AA - rDS(ON) = 0.023 , VGS = 10V - rDS(ON) = 0.027 , VGS = 5V DRAIN (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models GATE - Spice and SABER Thermal Im... See More ⇒

 8.3. Size:149K  fairchild semi
 huf76407d3st.pdf

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and... See More ⇒

 8.4. Size:211K  fairchild semi
 huf76409d3-s.pdf

HUF76409D3, HUF76409D3S Data Sheet December 2001 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.071 , VGS = 5V DRAIN GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER ... See More ⇒

 8.5. Size:266K  fairchild semi
 huf76407dk8.pdf

HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA Ultra Low On-Resistance BRANDING DASH - rDS(ON) = 0.090 , VGS = 10V - rDS(ON) = 0.105 , VGS = 5V Simulation Models 5 - Temperature Compensated PSPICE and SABER Electrical Models 1 2 - SPICE and SABER Thermal Impedanc... See More ⇒

 8.6. Size:285K  fairchild semi
 huf76429d3st.pdf

HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 8.7. Size:321K  fairchild semi
 huf76419s f085.pdf

April 2013 HUF76419S3ST_F085 N-Channel Power Trench MOSFET 60V, 29A, 35m D D Features Typ rDS(on) = 26.7m at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263AB S MOSFET Maximum Ratings TJ = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V ... See More ⇒

 8.8. Size:204K  fairchild semi
 huf76413d3-s.pdf

... See More ⇒

 8.9. Size:213K  fairchild semi
 huf76419s3st.pdf

HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 8.10. Size:215K  fairchild semi
 huf76437s3st.pdf

HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.017 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Ele... See More ⇒

 8.11. Size:199K  fairchild semi
 huf76423d3s.pdf

HUF76423D3, HUF76423D3S Data Sheet December 2001 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchild Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.032 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.037 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER... See More ⇒

 8.12. Size:241K  fairchild semi
 huf76423p3.pdf

HUF76423P3, HUF76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN Ultra Low On-Resistance SOURCE (FLANGE) DRAIN - rDS(ON) = 0.030 , VGS = 10V GATE - rDS(ON) = 0.035 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Elec... See More ⇒

 8.13. Size:206K  fairchild semi
 huf76429s3st.pdf

HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 8.14. Size:196K  fairchild semi
 huf76419d3st.pdf

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER G... See More ⇒

 8.15. Size:220K  fairchild semi
 huf76419p3-s3s.pdf

HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 8.16. Size:288K  fairchild semi
 huf76429d3-s.pdf

HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 8.17. Size:210K  fairchild semi
 huf76439s3s.pdf

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical ... See More ⇒

 8.18. Size:197K  fairchild semi
 huf76419d3s.pdf

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER G... See More ⇒

 8.19. Size:617K  fairchild semi
 huf76413dk f085.pdf

October 2010 HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m General Description These N-Channel power MOSFETs are manufactured us- Applications ing the innovative UltraFET process. This advanced pro- Motor and Load Control cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- Powertr... See More ⇒

 8.20. Size:214K  fairchild semi
 huf76407p3.pdf

HUF76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.092 , VGS = 10V GATE - rDS(ON) = 0.107 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance Mo... See More ⇒

 8.21. Size:542K  fairchild semi
 huf76407dk f085.pdf

HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging JEDEC MS-012AA Ultra Low On-Resistance - rDS(ON) = 0.090 , VGS = 10V BRANDING DASH - rDS(ON) = 0.105 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models - SPICE and SABER Thermal Impedance... See More ⇒

 8.22. Size:221K  fairchild semi
 huf76432p3-s3s.pdf

HUF76432P3, HUF76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017 , VGS = 10V GATE - rDS(ON) = 0.019 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electr... See More ⇒

 8.23. Size:234K  fairchild semi
 huf76407d3 huf76407d3s.pdf

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and... See More ⇒

 8.24. Size:207K  fairchild semi
 huf76429s3s.pdf

HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

 8.25. Size:792K  onsemi
 huf76407d3s.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.26. Size:785K  onsemi
 huf76423p3.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.27. Size:104K  intersil
 huf76413p3.pdf

HUF76413P3 Data Sheet November 1999 File Number 4723.1 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB Ultra Low On-Resistance - rDS(ON) = 0.049 , VGS = 10V SOURCE - rDS(ON) = 0.056 , VGS = 5V DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Im... See More ⇒

 8.28. Size:111K  intersil
 huf76409p3.pdf

HUF76409P3 Data Sheet November 1999 File Number 4666.1 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB Ultra Low On-Resistance - rDS(ON) = 0.062 , VGS = 10V SOURCE - rDS(ON) = 0.070 , VGS = 5V DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Im... See More ⇒