All MOSFET. HUFA76429S3S Datasheet

 

HUFA76429S3S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUFA76429S3S
   Marking Code: 76429S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 203 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-263AB

 HUFA76429S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUFA76429S3S Datasheet (PDF)

 ..1. Size:206K  fairchild semi
 hufa76429p3 hufa76429s3s hufa76429s3st.pdf

HUFA76429S3S HUFA76429S3S

HUFA76429P3, HUFA76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEE

 5.1. Size:229K  fairchild semi
 hufa76429d3.pdf

HUFA76429S3S HUFA76429S3S

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 5.2. Size:144K  fairchild semi
 hufa76429d3s hufa76429d3st.pdf

HUFA76429S3S HUFA76429S3S

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 5.3. Size:638K  onsemi
 hufa76429d3.pdf

HUFA76429S3S HUFA76429S3S

HUFA76429D3Data Sheet October 2013N-Channel Logic Level UltraFET Power MOSFET60 V, 20 A, 27 mPackagingFeaturesJEDEC TO-251AA Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 10VSOURCE- rDS(ON) = 0.027, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectriecal ModelsDRAIN - Spice and SABER Thermal Impedance Models

 5.4. Size:372K  onsemi
 hufa76429d3st-f085.pdf

HUFA76429S3S HUFA76429S3S

HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Impedance ModelsSOURCE- ww

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 12N60F

 

 
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