All MOSFET. IXTU01N100 Datasheet

 

IXTU01N100 Datasheet and Replacement


   Type Designator: IXTU01N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 6.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm
   Package: TO251AA
 

 IXTU01N100 substitution

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IXTU01N100 Datasheet (PDF)

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ixtu01n100 ixty01n100.pdf pdf_icon

IXTU01N100

IXTU 01N100VDSS = 1000 VHigh Voltage MOSFETIXTY 01N100ID25 = 100mAN-Channel, Enhancement ModeRDS(on) = 80 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU)01N100VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VDD (TAB)SVGSM Transient 30 VID25 TC = 25C; TJ = 25C to 150C 100 mAIDM

 0.1. Size:94K  ixys
ixtp01n100d ixtu01n100d ixty01n100d.pdf pdf_icon

IXTU01N100

IXTP 01N100DVDSS = 1000 VHigh Voltage MOSFETIXTU 01N100DID25 = 100 mAN-Channel, Depletion ModeIXTY 01N100DRDS(on) = 110 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSIDSS TC = 25C; TJ = 25C to

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ixtu01n80 ixty01n80.pdf pdf_icon

IXTU01N100

IXTU 01N80VDSS = 800 VHigh Voltage MOSFETIXTY 01N80ID25 = 100mAN-Channel, Enhancement ModeRDS(on) = 50 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU)01N100VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VGVGS Continuous 20 VDD (TAB)SVGSM Transient 30 VID25 TC = 25C; TJ = 25C to 150C 100 mAID

 9.1. Size:94K  ixys
ixtp02n50d ixtu02n50d ixty02n50d.pdf pdf_icon

IXTU01N100

IXTP 02N50DVDSS = 500 VHigh Voltage MOSFETIXTU 02N50DID25 = 200 mAN-Channel, Depletion ModeIXTY 02N50DRDS(on) = 30 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C 500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VGDSIDSS TC = 25C; TJ = 25C to 150C

Datasheet: IXTP30N08MA , IXTP30N08MB , IXTP30N10MA , IXTP30N10MB , IXTP8N45MA , IXTP8N45MB , IXTP8N50MA , IXTP8N50MB , IRFP064N , IXTU01N80 , IXTZ20N60MA , IXTZ20N60MB , IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IXTZ27N40MB , IXTZ35N25MA .

History: PS4953A | IRF452 | SMC3407 | IRF530N | NCEP040N10 | HY1908PM

Keywords - IXTU01N100 MOSFET datasheet

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