IXTU01N100 Specs and Replacement
Type Designator: IXTU01N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 6.9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm
Package: TO251AA
IXTU01N100 substitution
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IXTU01N100 datasheet
ixtu01n100 ixty01n100.pdf
IXTU 01N100 VDSS = 1000 V High Voltage MOSFET IXTY 01N100 ID25 = 100mA N-Channel, Enhancement Mode RDS(on) = 80 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V D D (TAB) S VGSM Transient 30 V ID25 TC = 25 C; TJ = 25 C to 150 C 100 mA IDM... See More ⇒
ixtp01n100d ixtu01n100d ixty01n100d.pdf
IXTP 01N100D VDSS = 1000 V High Voltage MOSFET IXTU 01N100D ID25 = 100 mA N-Channel, Depletion Mode IXTY 01N100D RDS(on) = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 1000 V VDGX TJ = 25 C to 150 C 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S IDSS TC = 25 C; TJ = 25 C to... See More ⇒
ixtu01n80 ixty01n80.pdf
IXTU 01N80 VDSS = 800 V High Voltage MOSFET IXTY 01N80 ID25 = 100mA N-Channel, Enhancement Mode RDS(on) = 50 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V G VGS Continuous 20 V D D (TAB) S VGSM Transient 30 V ID25 TC = 25 C; TJ = 25 C to 150 C 100 mA ID... See More ⇒
ixtp02n50d ixtu02n50d ixty02n50d.pdf
IXTP 02N50D VDSS = 500 V High Voltage MOSFET IXTU 02N50D ID25 = 200 mA N-Channel, Depletion Mode IXTY 02N50D RDS(on) = 30 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V G D S IDSS TC = 25 C; TJ = 25 C to 150 C... See More ⇒
Detailed specifications: IXTP30N08MA, IXTP30N08MB, IXTP30N10MA, IXTP30N10MB, IXTP8N45MA, IXTP8N45MB, IXTP8N50MA, IXTP8N50MB, AO4468, IXTU01N80, IXTZ20N60MA, IXTZ20N60MB, IXTZ24N50MA, IXTZ24N50MB, IXTZ27N40MA, IXTZ27N40MB, IXTZ35N25MA
Keywords - IXTU01N100 MOSFET specs
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