WFD1N60 Datasheet. Specs and Replacement

Type Designator: WFD1N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: TO-252

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WFD1N60 datasheet

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WFD1N60

WFD1N60 WFD1N60 WFD1N60 WFD1N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 1.3A,600V,R (Max 8.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced u... See More ⇒

Detailed specifications: HUFA76633S3ST, HUFA76639P3, HUFA76639S3S, HUFA76639S3ST, HUFA76645P3, HUFA76645S3S, HUFA76645S3ST, VTI634, IRL3713, WFD20N06, WFD2N60, WFD2N60B, WFD4N60, WFD4N60B, WFD5N50, WFD5N60B, WFD5N60C

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