All MOSFET. WFD1N60 Datasheet

 

WFD1N60 Datasheet and Replacement


   Type Designator: WFD1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO-252
 

 WFD1N60 substitution

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WFD1N60 Datasheet (PDF)

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WFD1N60

WFD1N60WFD1N60WFD1N60WFD1N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 1.3A,600V,R (Max 8.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

Datasheet: HUFA76633S3ST , HUFA76639P3 , HUFA76639S3S , HUFA76639S3ST , HUFA76645P3 , HUFA76645S3S , HUFA76645S3ST , VTI634 , IRF9640 , WFD20N06 , WFD2N60 , WFD2N60B , WFD4N60 , WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C .

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