WFD20N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: WFD20N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.6 nC
trⓘ - Rise Time: 12.6 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-252
WFD20N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFD20N06 Datasheet (PDF)
..1. Size:267K winsemi
wfd20n06.pdf
wfd20n06.pdf
WFD20N06Silicon N-Channel MOSFET Features 20A,60V, RDS(on)(Max 39m)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) High Current Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MO S FET is produced using Win se m i s advanced planar stripe, This latest technology has been especially designed t
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
