WFD20N06 Specs and Replacement
Type Designator: WFD20N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.6 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-252
WFD20N06 substitution
- MOSFET ⓘ Cross-Reference Search
WFD20N06 datasheet
wfd20n06.pdf
WFD20N06 Silicon N-Channel MOSFET Features 20A,60V, RDS(on)(Max 39m )@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) High Current Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MO S FET is produced using Win se m i s advanced planar stripe, This latest technology has been especially designed t... See More ⇒
Detailed specifications: HUFA76639P3, HUFA76639S3S, HUFA76639S3ST, HUFA76645P3, HUFA76645S3S, HUFA76645S3ST, VTI634, WFD1N60, 7N60, WFD2N60, WFD2N60B, WFD4N60, WFD4N60B, WFD5N50, WFD5N60B, WFD5N60C, WFD830
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