All MOSFET. WFD20N06 Datasheet

 

WFD20N06 Datasheet and Replacement


   Type Designator: WFD20N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-252
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WFD20N06 Datasheet (PDF)

 ..1. Size:267K  winsemi
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WFD20N06

WFD20N06Silicon N-Channel MOSFET Features 20A,60V, RDS(on)(Max 39m)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) High Current Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MO S FET is produced using Win se m i s advanced planar stripe, This latest technology has been especially designed t

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History: BSZ035N03LSG | SVF9N90F

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