WFD4N60 Datasheet. Specs and Replacement

Type Designator: WFD4N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-252

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WFD4N60 substitution

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WFD4N60 datasheet

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WFD4N60

WFD4N60 WFD4N60 WFD4N60 WFD4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V.R (Max 2.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General Descr... See More ⇒

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WFD4N60

WFD4N60B WFD4N60B WFD4N60B WFD4N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V.R (Max 2.4 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General D... See More ⇒

Detailed specifications: HUFA76645P3, HUFA76645S3S, HUFA76645S3ST, VTI634, WFD1N60, WFD20N06, WFD2N60, WFD2N60B, FTP08N06A, WFD4N60B, WFD5N50, WFD5N60B, WFD5N60C, WFD830, WFD830B, WFF10N60, WFF10N65

Keywords - WFD4N60 MOSFET specs

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