All MOSFET. WFD4N60B Datasheet

 

WFD4N60B Datasheet and Replacement


   Type Designator: WFD4N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-252
 

 WFD4N60B substitution

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WFD4N60B Datasheet (PDF)

 ..1. Size:532K  winsemi
 wfd4n60b.pdf pdf_icon

WFD4N60B

WFD4N60BWFD4N60BWFD4N60BWFD4N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.4)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General D

 7.1. Size:532K  winsemi
 wfd4n60.pdf pdf_icon

WFD4N60B

WFD4N60WFD4N60WFD4N60WFD4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General Descr

Datasheet: HUFA76645S3S , HUFA76645S3ST , VTI634 , WFD1N60 , WFD20N06 , WFD2N60 , WFD2N60B , WFD4N60 , EMB04N03H , WFD5N50 , WFD5N60B , WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 .

Keywords - WFD4N60B MOSFET datasheet

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