WFD4N60B Datasheet. Specs and Replacement

Type Designator: WFD4N60B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-252

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WFD4N60B datasheet

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WFD4N60B

WFD4N60B WFD4N60B WFD4N60B WFD4N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V.R (Max 2.4 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General D... See More ⇒

 7.1. Size:532K  winsemi
 wfd4n60.pdf pdf_icon

WFD4N60B

WFD4N60 WFD4N60 WFD4N60 WFD4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V.R (Max 2.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General Descr... See More ⇒

Detailed specifications: HUFA76645S3S, HUFA76645S3ST, VTI634, WFD1N60, WFD20N06, WFD2N60, WFD2N60B, WFD4N60, IRFB31N20D, WFD5N50, WFD5N60B, WFD5N60C, WFD830, WFD830B, WFF10N60, WFF10N65, WFF12N60

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