WFF15N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: WFF15N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-220F
WFF15N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFF15N60 Datasheet (PDF)
wff15n60.pdf
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WFF15N60WFF15N60WFF15N60WFF15N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 15A,600V, R (Max0.52)@V =10VDS(on) GS Ultra-low Gate charge(Typical 36nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce
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