All MOSFET. WFF18N50 Datasheet

 

WFF18N50 Datasheet and Replacement


   Type Designator: WFF18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-220F
 

 WFF18N50 substitution

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WFF18N50 Datasheet (PDF)

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WFF18N50

WFF18N50WFF18N50WFF18N50WFF18N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

Datasheet: WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , BS170 , WFF20N60 , WFF20N60S , WFF2N60 , WFF2N60B , PJA138K , PJA3400 , PJA3401 , PJA3402 .

History: FMV11N60E | IXTT140N10P | SSF2341E | STD35NF3LLT4 | AP72T03GJ-HF | SVG108R5NAD | MEM2307XG

Keywords - WFF18N50 MOSFET datasheet

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