WFF18N50 Datasheet and Replacement
Type Designator: WFF18N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-220F
WFF18N50 substitution
WFF18N50 Datasheet (PDF)
wff18n50.pdf

WFF18N50WFF18N50WFF18N50WFF18N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced
Datasheet: WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , BS170 , WFF20N60 , WFF20N60S , WFF2N60 , WFF2N60B , PJA138K , PJA3400 , PJA3401 , PJA3402 .
History: AFP2317 | CSFR3N60P | BRCS20N06DP | HGD230N10A | AOK42S60 | AOK40N30 | ZXMN3F30FH
Keywords - WFF18N50 MOSFET datasheet
WFF18N50 cross reference
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History: AFP2317 | CSFR3N60P | BRCS20N06DP | HGD230N10A | AOK42S60 | AOK40N30 | ZXMN3F30FH



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